• 这种结构可以构成横向晶体管发射极电流增益2 ~4倍。

    Such MSM structure can also be formed into a transverse phototransistor with its common-emitter current gain from 2 to '4.

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  • 2 - 1 (a)给出了发射极取向晶体管物理特性,同时给出器件电压极性大小

    Figure 2-1 (a) shows the physical representation of the BJT in its common-emitter orientation, and also shows typical voltage polarities and magnitudes for the case of a silicon device.

    youdao

  • 2 - 1 (a)给出了发射极取向晶体管物理特性,同时给出器件电压极性大小

    Figure 2-1 (a) shows the physical representation of the BJT in its common-emitter orientation, and also shows typical voltage polarities and magnitudes for the case of a silicon device.

    youdao

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