这种结构还可以构成横向光晶体管,共发射极电流增益为2 ~ 4倍。
Such MSM structure can also be formed into a transverse phototransistor with its common-emitter current gain from 2 to '4.
图2 - 1 (a)给出了共发射极取向的晶体管的物理特性,同时也给出了硅器件的电压极性和大小。
Figure 2-1 (a) shows the physical representation of the BJT in its common-emitter orientation, and also shows typical voltage polarities and magnitudes for the case of a silicon device.
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