同时还介绍了电子束光刻技术及其改进。
The electron beam lithography and its improvement are introduced also.
本文综述了深亚微米光刻和纳米光刻技术。
In this article, deep submicron lithography and nano processing are reviewed.
本发明主要涉及浸渍光刻技术的新材料和工艺。
The invention mainly relates to a new material and process for immersion lithography.
除了半导体外，纳米压印光刻技术也有其他应用？
Status Offline Nanoimprint has applications other than semiconductors.
利用电子束光刻技术制作了基于钛酸钠纳米线的纳米器件。
Individual sodium titanate nanowire-based device is fabricated via e-beam lithography techniques.
应用于立体光刻技术的耐久性，白色，防水和低收缩的树脂。
Durable, white, water - resistant, low shrinkage resin for stereo lithography for SLA system.
纳米光刻技术是制作纳米结构的基础，具有重要的应用前景。
The fabrication of nanostructures, an important part of nanotechnology, is based upon nanolithography which will be widely employed in the future.
LDD和SOI结构； 移相掩模光刻技术和多层金属布线工艺。
The short channel effects , the structure of LDD and SOI, phaseshift mask and multilevel interconnection were included.
介绍了一种用软光刻技术制作微流芯片上PDMS微混合器的工艺。
A process of soft lithography was introduced for fabrication of PDMS (polydimethylsiloxane) micro-mixer on micro-fluidic chip.
纳米压印光刻技术主要包括热压印、紫外固化压印和微接触法压印。
There are a few varieties in nanoimprint, which can be loosely divided into hot embossing, UV-cured imprinting, and micro-contact printing.
以紫外光光刻、硅蚀刻及软光刻技术制备了微柱阵列型细胞培养基底。
UV lithography, silicon etching and soft lithography were adopted to fabricate micropillar arrayed cell culture substrates.
同时，也指出光刻技术和印刷技术在彩色PD P显示器中的重要应用。
At same time, it has been pointed out that the photoetching technology and printing technology have important application in color PDP display.
广泛应用于微电子加工，光刻技术和扫描显微技术中的聚焦或成像系统中。
It can be used in microelectronic processing, photoetching and scan microscopic focusing or imaging system.
具有角度限制的电子束投影曝光技术有可能成为21世纪最有潜力的纳米光刻技术之一。
The projection electron beam lithography with angular limitation(PEBL)is potentially one of the most attractive techniques for nano lithography in the21st Century.
纳米结构制作是纳米技术的重要组成部分，原子光刻技术是纳米图形制作的一项新方法。
Fabrication of nanostructures is an important part of nanotechnology, and atom lithography technology is a new nanostructure fabrication method.
同时还介绍了立体光刻技术结合抗腐蚀层、牺牲层工艺加工微器件的原理、方法和应用。
The method and the principle of manufacturing micro-machines by sacrificing layer technology together with 3-d lithography is discussed also.
弥补了原子光刻技术中利用激光驻波场控制原子堆积只能制作单一量子点、线等周期性图形的不足。
It can make up the shortage that only the periodic dots or lines can be made when using laser standing wave field to control the atoms to stack on wafer in atom lithography.
传统光学光刻技术的高成本促使科学家去开发新的非光学方法，以取代集成电路工厂目前所用的工艺。
The high cost in traditional optics lithography drives the scientists to invent new non-optical methods to replace processes currently used in IC factories.
因为193 nm液浸式光刻技术与双重成像的结合将迫使芯片产商对芯片设计准则设置更多的限制。
Using 193-nm with double patterning will force chip makers to use "more restrictive design rules," he said.
针对纳米压印光刻技术中压印脱模后的留膜去除问题，提出了一种基于光刻版的无留膜紫外纳米压印技术。
For the removal of residual layer after template is released during nanoimprint lithography, a new UV-nanoimprint technology without residual layer based on photolithography mask was proposed.
为了解决软光刻技术中核心元件弹性印章的制备技术，对SU-8胶印模和聚合物弹性印章进行了工艺研究。
Processes of SU-8 photoresist mold and polymer elastomeric stamp were researched in order to solve the technology of the key part—elastomeric stamp in the soft-lithography.
作为一种新型的微图形复制技术，软光刻技术用弹性模替代传统光刻技术中使用的硬模来产生微形状和微结构。
As a newly coming micro fabrication technology, soft lithography use elastomeric stamp to replace hard stamp in traditional lithography to fabricate micro patterns and structures.
纳米压印光刻技术具有效率高、失真率低、易于实现大面积图形转移等特点，成为下一代光刻技术的研究热点。
Nanoimprint lithography becomes a hot focus of novel lithography technologies of next generation due to its advantages of low cost, high yield and fidelity of large area pattern transfer.
主要结合各种基于光 束调制和光刻技术的人工控制超级横向生长方法，讨论了获得大晶粒尺寸优质多晶硅薄膜的途径。
Approaches to enlarging poly-Si film grain size are discussed, with emphasis on existing optics-based and lithography-based artificial controlled super lateral growth(AC-SLG) methods.
纳米压印作为非光学的下一代光刻技术，具有分辨率高、成本低、产率高等诸多优点，因而可能应用于将来的半导体制造中。
Nanoimprint, as a non-optical lithography technology , has demonstrated its ability for semiconductor manufacturing by offering resolution below sub-10nm feature size, high throughput and low cost.
因此目前电子束光刻设备主要的用途是用于刻制掩膜板，许多人甚至认为电子束光刻技术的产出量永远也无法满足芯片量产的需求。
E-beam tools are used in photomask writing, but many believe the technology will never be fast enough for high-volume semiconductor lithography.
在高数值孔径、低工艺因子的光刻技术中，投影物镜彗差对光刻质量的影响变得越来越突出，因而需要一种快速、高精度的彗差原位测量技术。
In high numerical aperture and low technic factor lithography process, degradation of the image quality because of the coma aberration in the projection lens has become a serious problem.
这款产品将使用Intel第三代HKMG工艺，第五代硅应变技术，另外与32nm类似，22nm制程仍将继续使用193nm液浸式光刻技术。
It will also use copper interconnects, low-k, strain silicon and other features. Like 32-nm, Intel will make use of 193-nm immersion lithography.
这款产品将使用Intel第三代HKMG工艺，第五代硅应变技术，另外与32nm类似，22nm制程仍将继续使用193nm液浸式光刻技术。
It will also use copper interconnects, low-k, strain silicon and other features. Like 32-nm, Intel will make use of 193-nm immersion lithography.
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