The planar cell structure integrated a Hi-K (high capacitance) metalgate stack into the NAND production to allow for smaller floating gates and thus higher storage capacity.
Using 32nm HKMG (High-K MetalGate) process technology, the 1.7 GHz dual core Exynos 5 Dual brings unmatched performance to leading mobile devices while maintaining low power consumption.
The tragedy occurred when thousands of fans were let in through a gate into an already crowded standing area, leading many to be crushed against metal fences and concrete walls.