外延生长工艺过程由计算机控制。
All the procedure for epitaxy growth was controlled by a computer.
文章分析了半导体薄膜生长工艺流程的特点。
The process characteristics of growth of semiconductor film are analyzed.
薄层氧化物生长工艺仍在产生一系列可供采用的技术。
The technology for thin oxide growth is still emerging with a variety of techniques being used.
多晶硅锭的生长工艺过程都要通过加热室的调整来实现。
Technique process of growth of the polycrystalline silicon is based on the adjustment of the heating chamber.
阐述了稀土金属硅化物的生长工艺和与硅衬底间势垒及界面特性。
The growth techniques, the barrier states and the interfaces for rare earth silicides were thoroughly described.
生长工艺和热处理条件对晶纤结构和超导特性的影响也作了初步分析。
The influence of growth technology and post growth heat treatment condition on the structure and the superconducting properties is also discussed.
本文介绍了各种刀具涂层材料、刀具涂层结构和刀具生长工艺的研究现状。
The latest research advances in tool coating materials, tool coating structure and the coating technology are investigated and summarized.
详细描述了晶体生长工艺过程，讨论了生长气氛对及坩埚形状对晶体生长的影响。
We described the crystal growth technology in detail and discussed the influence on the crystal growth of the atmosphere in the furnace and the shape of the crucible.
优化有机晶体的生长工艺是获得性能优良的有机场效应管（OFET）的重要基础。
Optimization of the organic crystal fabrication process is important for obtaining the high performance of organic field-effect transistors (OFETs).
比较和分析了不同的可靠性测试方法，并对超薄氧化层生长工艺的优化进行了探讨。
Different accelerating methods for reliability test is analyzed and compared. Furthermore, the process optimization of thin oxides is discussed.
本文对掺镱双钨酸钇钠晶体的原料处理、生长工艺及晶体结构、性能和缺陷进行了研究分析。
This article analyzes and studies the raw material handling, growth technology, crystal structure, character and defect of the ytterbium doped natrium yttrium tungstate laser crystal.
通过改变外延生长工艺来调节两层薄膜的折射率，可在一定波导的厚度范围内实现单模传输。
By adjusting the difference of refractive index of the double layer film, single mode operation can be realized with a certain waveguide thickness.
有些利用复杂的可调双波导结构来实现无跳模波长调谐，但是整个制作过程需要复杂的刻蚀再生长工艺。
However, the laser requires very complex multiple regrowth and etching fabrication process. a novel mode-hop free tuneable diode laser is proposed.
概述了现代特大规模集成电路对硅单晶片的质量要求、直拉硅单晶生长工艺及晶片加工技术研究进展和硅单晶材料市场现状及发展趋势。
The quality requirements on si wafer for modern ULSI, research progress on CZ si crystal growth technology and wafer processing, the market situation and prospect were outlined.
概述了现代特大规模集成电路对硅单晶片的质量要求、直拉硅单晶生长工艺及晶片加工技术研究进展和硅单晶材料市场现状及发展趋势。
The quality requirements on si wafer for modern ULSI, research progress on CZ si crystal growth technology and wafer processing, the market situation and prospect were outlined.
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