于是人们开始研究如何在MOS器件尺寸缩小的同时，仍然继续保持长沟道器件的良好特性。
Then people begin to study how to maintain performances of long channel devices when the characteristic dimension of MOSFETs reduced.
采用LDD结构：3。在允许的范围内，适当增加器件的沟道长度。
Adopting LDD structure. 3. Properly increasing the channel length of MOS devices in admitted scope.
研究了有机薄膜场效应晶体管的源漏接触电阻和沟道电阻对器件性能的影响，结果表明接触电阻是影响器件性能的主要因素。
The channel resistance and the source-drain contact resistance of OTFT were investigated, and the results indicated that the latter is the main factor to affect the electric performances of OTFTs.
研究表明，室温下有源沟道具有较大的光增益和折射率增量，有望实现可见波段的可调谐有源光波导激光器件。
It shows that the active channel with sizeable optical gain and a substantial increase of the refractive index are promising for the realization of active waveguide tunable laser.
该物理模型考虑了高压dmos器件的准饱和特性、沟道非均匀掺杂特性和温度效应。
The unique features of DMOS such as quasi-saturation, non-uniformly doped channel, and temperature dependencies are accurately modeled.
m时，由于制造工艺的局限性以及沟道长度变短、结深变浅后，器件穿通风险加大。
Meanwhile, the high risk of punch-through due to process limitation was described when channel length became smaller and source junction became shallower.
模拟结果显示：越细长的沟道，器件的短沟效应越弱，器件的亚阈值斜率随栅氧化层增厚而加大。
The simulated results indicate that thinner and longer channel can reduce short channel effects, while thicker gate oxide will lead to higher subthreshold slopes.
本文对三沟道体电荷耦合器件(BCCD)在X光区的光电特性进行了数值模拟。
In this paper the photoelectric characteristics of the three channel bulk charge coupled device (BCCD) are simulated in the region of X ray.
研究了极细沟道NMOSFET器件的随机电报信号噪声（RTS）的特征。
Random telegraph signals (RTSs) in NMOSFETs with ultra narrow channels was investigated.
采用系统研究方法来分析包括MOS器件的沟道噪声和感应栅噪声在内的CMOS低噪声放大器中的噪声，并提出了一个新的噪声系数解析式。
A systematic approach is used to analyze the noise in CMOS low noise amplifier (LNA), including channel noise and induced gate noise in MOS devices.
一种半导体器件结构（10），其使用两个半导体层（16&20）以分别优化N和P沟道晶体管载流子迁移率。
A semiconductor device structure (10) uses two semiconductor layers (16 & 20) to separately optimize N and P channel transistor carrier mobility.
采用系统研究方法来分析包括MOS器件的沟道噪声和感应栅噪声在内的CMOS低噪声放大器中的噪声，并提出了一个新的噪声系数解析式。
A detailed principle and a rigorous analysis of a new noise, the gate-induced noise, in pixel MOSFET of CMOS imagers are provided.
采用系统研究方法来分析包括MOS器件的沟道噪声和感应栅噪声在内的CMOS低噪声放大器中的噪声，并提出了一个新的噪声系数解析式。
A detailed principle and a rigorous analysis of a new noise, the gate-induced noise, in pixel MOSFET of CMOS imagers are provided.
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