于是人们开始研究如何在MOS器件尺寸缩小的同时，仍然继续保持长沟道器件的良好特性。
Then people begin to study how to maintain performances of long channel devices when the characteristic dimension of MOSFETs reduced.
采用LDD结构：3。在允许的范围内，适当增加器件的沟道长度。
Adopting LDD structure. 3. Properly increasing the channel length of MOS devices in admitted scope.
研究了有机薄膜场效应晶体管的源漏接触电阻和沟道电阻对器件性能的影响，结果表明接触电阻是影响器件性能的主要因素。
The channel resistance and the source-drain contact resistance of OTFT were investigated, and the results indicated that the latter is the main factor to affect the electric performances of OTFTs.
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