本文认为多余载流子的产生来源于中子辐照造成的晶格损伤缺陷，并与原始单晶缺陷有关。

We think that the excess carriers are generated from the lattice damage defects caused by the neutron irradiation, and may be affected by the as-grown defects of FZSi.

youdao

本文认为多余载流子的产生来源于中子辐照造成的晶格损伤缺陷，并与原始单晶缺陷有关。

We think that the excess carriers are generated from the lattice damage defects caused by the neutron irradiation, and may be affected by the as-grown defects of FZSi.

youdao