excess charge carrier
... charge carrier mobility modulation 载流子迁移率调制 excess charge carrier 多余载流子 charge carrier injection 载劣注入 ; 载流注入 ...
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本文认为多余载流子的产生来源于中子辐照造成的晶格损伤缺陷，并与原始单晶缺陷有关。
We think that the excess carriers are generated from the lattice damage defects caused by the neutron irradiation, and may be affected by the as-grown defects of FZSi.
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