• 续流二极管反向恢复特性得到了明显改善。

    The reverse recovery properties of the freewheel diode are also distinctly improved.

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  • 输出整流二极管反向恢复电压尖峰

    There is no high reverse recovery related voltage spike in the rectifier diodes.

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  • 震后重力场松驰反向恢复

    After the earthquake, the gravity field relaxed and resumed inversely.

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  • 借助电荷控制法引入有效寿命概念获得反向恢复时间

    The reverse recovery time is also obtained by using charge-controlled method.

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  • 本文论述了计算晶闸管关断模型反向恢复电流参数一种方法

    This paper describes a method for calculating reverse recovery current parameters of the thyristor turnoff model.

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  • 为了改善反向恢复特性,必须降低通态过程靠近阳极过剩载流子浓度

    In order to improve the reverse recovery characteristic the excess carrier concentration close to the anode during the on-state has to be reduced.

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  • 早期sJ器件有着较大的反向恢复电流并且某些反向恢复的情况下易于失效。

    Early generation SJ devices had high reverse recovery current and failed during some reverse recovery events.

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  • 采用工艺制造二极管能够有效地减小开关二极管反向恢复时间提高开关速度

    Using the technology of Pt diffusion to produce diodes can shorten the reverse recovery time and increase the velocity of switching.

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  • 项目主要针对影响器件开关速率高效性能反向恢复电荷电荷进行优化和改进。

    Our work mainly focus on the improvements of reverse recovery charge and gate charge which impact much on high speed switching and high efficiency performance of a VDMOSFET.

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  • 实验结果表明,该二极管反向恢复软度因子提高到了1.0左右,传统PIN二极管了较大改善

    The results of test indicate that the reverse recovery softness of the diodes is increased to about 1.0, and is more improved than the conventional PIN diode.

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  • 测试结果表明此类恢复二极管具有反向恢复时间短、软度反向漏电的优良特性,在国际上处于领先水平。

    The experiment results show that this kind of diode have fast reverse recovery time, large reverse softness and low reverse leakage.

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  • 采用直拉单晶硅片代替成本较高外延硅片,采取铂扩散方法引入复合中心从而控制少子寿命减少恢复二极管反向恢复时间

    Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.

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  • 采用直拉单晶硅片代替成本较高外延硅片,采取铂扩散方法引入复合中心从而控制少子寿命减少恢复二极管反向恢复时间

    Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode.

    youdao

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