The thin intrinsic layer and the high electron saturation velocity also gives 4H-SiC PiN diodes better reverse recovery characteristics over the silicon counterparts.
较薄的本征层以及碳化硅的高饱和电子漂移速度也使4H-SiC PiN二极管拥有优于硅PiN器件的反向恢复特性。
参考来源 - 4H·2,447,543篇论文数据，部分数据来源于NoteExpress
续流二极管的反向恢复特性也得到了明显改善。
The reverse recovery properties of the freewheel diode are also distinctly improved.
输出整流二极管无反向恢复电压尖峰；
There is no high reverse recovery related voltage spike in the rectifier diodes.
借助电荷控制法并引入有效寿命概念获得反向恢复时间。
The reverse recovery time is also obtained by using charge-controlled method.
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