在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。

The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.

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每辆车有块小金属板，它10厘米长，它有闪光二极管。

Each car has a little metal plate which is ten centimeters long, and it blanks out a light-emitting diode.

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包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。

The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.

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