在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
每辆车有块小金属板，它10厘米长，它有闪光二极管。
Each car has a little metal plate which is ten centimeters long, and it blanks out a light-emitting diode.
包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。
The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.
研制了三类不同金属和III族氮化物接触的肖特基势垒二极管。
Schottky barrier diodes with different metal on III nitride have been fabricated.
对金属氧化物变阻器的物理特性进行了分析，并完成了MOV元件的数学建模，将其等效为电感、电阻、二极管三部分。
This paper analyses the physical characteristic of MOV and gives out its mathematical model by making it equivalent to inductance, resistance and diode three parts.
虽然这种可能性很小，但二极管故障可能最终导致一小部分裸线与金属盒接触。
Although the possibility is remote3, diode failure4 might eventually cause a small section of bare wire to contact the metal cabinet.
肖特基势垒二极管是利用金属半导体的整流接触特性而制成的二极管。
Schottky Barrier Diode (SBD) is based on the rectification characteristics of metal-semiconductor contact.
照明装置至少包括带内螺纹的金属衬套、印刷电路板、发光二极管、微动开关、弹簧电极、电池及金属后盖。
The lighting device comprises at least a metal sleeve with a female thread, a printed circuit board, a LED, a microswitch, a spring electrode, a battery and a rear metal cover.
此发光二极管主要包含一发光结构及一金属反射层。
It comprises a light emitting structure and a metallic reflecting layer.
此发光二极管主要包含一发光结构及一金属反射层。
It comprises a light emitting structure and a metallic reflecting layer.
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