首次对薄膜SOI功率器件的击穿电压与线性掺杂漂移区的杂质浓度梯度的关系进行了实验研究。
The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.
采用ADI与高阶紧致差分相结合的方法计算薄膜soi RESURF结构击穿电压。
The application of ADI and high-order compact finite difference method to the breakdown voltage analysis of thin film SOI RESURF structure.
绝缘薄膜材料在长期的运行过程中，受到电、热、机械和环境因素的联合作用，其性能将因此逐渐变坏，并最终导致绝缘击穿。
During the long operational time, the film insulation is exposed to the electrical, thermal and mechanical stresses, which will cause insulation degradation and lead to breakdown finally.
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