首次对薄膜SOI功率器件的击穿电压与线性掺杂漂移区的杂质浓度梯度的关系进行了实验研究。
The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.
采用ADI与高阶紧致差分相结合的方法计算薄膜soiRESURF结构击穿电压。
The application of ADI and high-order compact finite difference method to the breakdown voltage analysis of thin film SOI RESURF structure.
绝缘薄膜材料在长期的运行过程中，受到电、热、机械和环境因素的联合作用，其性能将因此逐渐变坏，并最终导致绝缘击穿。
During the long operational time, the film insulation is exposed to the electrical, thermal and mechanical stresses, which will cause insulation degradation and lead to breakdown finally.
采用射频溅射制备BST薄膜，研究了薄膜的介电击穿特性。
Dielectric breakdown of BST thin films prepared by RF sputtering is studied in this paper.
在硅铝共掺杂的薄膜中，当硅铝总含量为8%时杂化薄膜的击穿强度下降最少，薄膜的热分解温度达到最高值。
When the nano-particles' weight content was 8%, the drop of breakdown strength reach smallest value and the thermo-decomposed temperature reach the highest value.
X射线衍射仪、电子能谱仪、原子力显微镜和椭圆偏振仪等研究薄膜的击穿电压、介电常数、晶体结构、化学成分、表面形貌及薄膜的折射率。
The breakdown voltage, permittivity, crystal structure, composition, surface and refractive index of the thin films were studied by I-V, C-V, XRD, EDS, AFM and elliptical polarization instrument.
X射线衍射仪、电子能谱仪、原子力显微镜和椭圆偏振仪等研究薄膜的击穿电压、介电常数、晶体结构、化学成分、表面形貌及薄膜的折射率。
The breakdown voltage, permittivity, crystal structure, composition, surface and refractive index of the thin films were studied by I-V, C-V, XRD, EDS, AFM and elliptical polarization instrument.
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