技术介绍绝缘栅双极型晶体管(Insulated Gate Bipolar Transistor，简称IGBT)是电磁炉的重要组成部分。然而，由于绝缘栅双极型晶体管是一个大功率的功率管，在电磁炉上电的瞬间，若IGBT得到错误的驱...
基于664个网页-相关网页
该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。
The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
提出了一种用PSPICE程序模拟绝缘栅双极型晶体管(IGBT)特性的方法。
A method to simulate the characteristics of insulated gate bipolar transistor (IGBT) with PSPICE program is proposed in this paper.
本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。
The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
应用推荐