...一种基于脉宽调制技术(Pulse Width Modulation,PWM)使用变压器、电抗器、绝缘栅型双极晶体管(Insulated Gate Bipolar Transistor,IGBT)构成连续可调电感的电路设计。
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绝缘栅双极型晶体管 IGBT ; Insulated Gate Bipolar Transistor ; Trench IGBT
绝缘栅极双极型晶体管 Isolated Gate Bipolar Transistor
绝缘栅型双极晶体管
Insulated gate type bipolar transistor
以上为机器翻译结果，长、整句建议使用 人工翻译 。
本文提出空穴注入控制型横向绝缘栅双极晶体管(CI LIGBT)，可有效控制高压下阳极区空穴注入，提高器件的抗闩锁性能。
Controlled hole injection LIGBT (CI LIGBT) is proposed in the paper, which can effectively control the hole injection with high anode voltage, and its latch up free characteristics can be improved.
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