... lead sulfide photodetector 释义：硫化铅光电探测器,硫化铅红外线探测器,硫化铅光敏电阻 junction resistance 释义：结电阻 long-tailed pair 释义：反馈电阻接负电源的差动放大器 ...
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Another important phenomenon is that the temperature dependence of the junction resistance shows a metal-insulator transition, whose transition temperature can be controlled by the bias voltage.
在80~300 K温度区间内,a-C/Si异质结的结电阻随温度的规律变化,呈现出金属-绝缘体转变现象;并且随着外加偏压的增加,金属-绝缘体转变点将会向高温方向移动。
参考来源 - 用磁控溅射方法制备非晶碳膜/硅异质结及其电输运性质的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
碳纳米管膜网络中，其电阻由碳纳米管结电阻和碳纳米管本身的电阻决定。
In the CNT films, their total resistance consists of the resistance of CNT junctions and their own resistance.
着重强调了激光能量密度、脉冲宽度、作用时间等工艺参数与结深、杂质分布以及结电阻之间的密切关联。
The close correlations between laser energy density, pulse duration, interaction time and junction depth, dopant distribution as well as junction resistance are mainly emphasized in this paper.
磁性隧道结结构中发现的隧道磁电阻效应（TMR）灵敏度高、结电阻容易调整，在开发新型MRAM方面极具应用潜力。
Tunneling magnetoresistance (TMR) discovered in magnetic tunneling junction (MTJ) has high sensitivity and adjustable junction resistance, so it has potential to be applied in new MRAM devices.
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