碳纳米管膜网络中，其电阻由碳纳米管结电阻和碳纳米管本身的电阻决定。
In the CNT films, their total resistance consists of the resistance of CNT junctions and their own resistance.
着重强调了激光能量密度、脉冲宽度、作用时间等工艺参数与结深、杂质分布以及结电阻之间的密切关联。
The close correlations between laser energy density, pulse duration, interaction time and junction depth, dopant distribution as well as junction resistance are mainly emphasized in this paper.
磁性隧道结结构中发现的隧道磁电阻效应（TMR）灵敏度高、结电阻容易调整，在开发新型MRAM方面极具应用潜力。
Tunneling magnetoresistance (TMR) discovered in magnetic tunneling junction (MTJ) has high sensitivity and adjustable junction resistance, so it has potential to be applied in new MRAM devices.
磁性隧道结结构中发现的隧道磁电阻效应（TMR）灵敏度高、结电阻容易调整，在开发新型MRAM方面极具应用潜力。
Tunneling magnetoresistance (TMR) discovered in magnetic tunneling junction (MTJ) has high sensitivity and adjustable junction resistance, so it has potential to be applied in new MRAM devices.
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