放电稳定、阴极材料蒸发离化率高、离子能量高和沉积速率快的阴极真空弧放电等离子体沉积(VAPD) 技术已广泛地用于沉积金属膜、类金刚石膜、TiN 膜和半导体膜等薄膜或涂层的制备。
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ECR等离子体沉积 ECR plasma deposition
脉冲等离子体沉积 Pulsed Plasma Deposition ; PPD
等离子体化学气相沉积 PCVD ; Plasma Enhanced Chemical Vapor Deposition ; plasma cvd
等离子体离子辅助沉积 PIAD
等离子体辅助沉积 PIAD
等离子体增强沉积 PEVD ; plasma enhanced deposition
常压等离子体液相沉积 APPLD
等离子体电解沉积 plasma electrolytic deposition
阴极等离子体液相沉积 cathodic plasma liquid deposition
利用热灯丝dc等离子体沉积使金刚石成核和生长的方法和设备。
A method and apparatus for nucleation and growth of diamond by hot-filament DC plasma deposition.
目前主要采用化学气相沉积法、离子束溅射法、激光等离子体沉积和激光烧蚀、离子镀、离子注入法等制备方法。
Its structure and character were reviewed, and the synthetic methods, including CVD, ion beam sputtering, laser ablation, ion plating and ion irradiation et al., were completely introduced.
提出了一种新颖的多孔硅表面钝化技术，即采用微波等离子体辅助的化学气相沉积（MPCVD）方法在多孔硅上沉积金刚石薄膜。
A novel passivation technology of porous silicon (PS) surface, i. e. , depositing diamond film on the PS surface by microwave plasma assisted chemical vapor deposition (MPCVD) method, was developed.
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