采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜。
A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperatures (T_s).
利用微波ecr等离子体增强磁控溅射沉积技术在玻璃表面制备了硅膜。
The silicon thin films on glass substrate were prepared using microwave ECR plasma source enhanced magnetron sputtering.
传统等离子体增强化学气相沉积(PECVD)技术，工艺成熟，制备的薄膜质量高，较适合大规模工业化生产。
For the high technical maturity and the high deposition quality, traditional plasma enhanced chemical vapour deposition (PECVD) technology was wide applied in the large-scale industrial production.
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