制作了精细图形，等离子体损伤较低。
Fine tiny patterns with low plasma damage were also fabricated.
我们同时对反应离子刻蚀工艺中的等离子体充电效应和离子轰击对氧化硅造成的损伤进行了讨论。
At the same time, the influence of plasma charging and ion bombardment on the quality of silicon oxide are analyzed.
这些陷阱可能是在不同生长条件的介质膜淀积过程中等离子体引进的有关辐照损伤。
The origin of these traps might be due to irradiation damage induced by plasma during insulating layer growth process.
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