制作了精细图形，等离子体损伤较低。
Fine tiny patterns with low plasma damage were also fabricated.
我们同时对反应离子刻蚀工艺中的等离子体充电效应和离子轰击对氧化硅造成的损伤进行了讨论。
At the same time, the influence of plasma charging and ion bombardment on the quality of silicon oxide are analyzed.
这些陷阱可能是在不同生长条件的介质膜淀积过程中等离子体引进的有关辐照损伤。
The origin of these traps might be due to irradiation damage induced by plasma during insulating layer growth process.
实验验证了此系统检测损伤的准确性，并分析了探测的等离子体信号与损伤形貌的关系。
Experiment is done to verify the accuracy of this system and analyze the relationship between the plasma signals and the damage morphologies.
这样等离子体干法蚀刻对氮化镓的电气性能的损伤有显著降低。
The plasma dry etching method is of evidently-reduced damage to the electrical performance of the allium nitride.
这样等离子体干法蚀刻对氮化镓的电气性能的损伤有显著降低。
The plasma dry etching method is of evidently-reduced damage to the electrical performance of the allium nitride.
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