...成晶体体管开启的状况下，从S极（源极）到D极（漏极）的泄电量大幅度减低而从金属栅极到形成晶体 体硅衬底 （ Silicon Substrate ）的驱动电流效率晋升20%以上数值表白，45纳米晶片每传世私服秒钟可以兴许进行约三千亿次的开关动作，即形成晶体体管的能晋升20%...
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As operation frequency and integration improved,RF circuits on low resistivity Si substrate perform poorer because of high energy loss and serious crosstalk through the substrate.
随着射频电路工作频率和集成度的不断提高,常规CMOS制造中使用的低阻硅衬底具有较大的损耗和串扰,较难实现射频性能优异的器件与电路。
参考来源 - 基于SOI衬底的共平面波导射频损耗特性研究In this paper, the stable structure of SinNm cluster and the reaction mechanism of PCl_3/H_2 on Si underlay were investigated with the density functional theory method on the B3LYP/ 6-311g(d,p) level.
本论文利用Gaussian98程序,采用密度泛函理论B_3LYP方法,在6-311G**基组下,研究了SinNm的稳定构型及PCl_3/H_2在硅衬底表面上反应机理。
参考来源 - Si·2,447,543篇论文数据，部分数据来源于NoteExpress
杨全国设计了一种以钢珠轴承填充并以硅衬底的仪表盘座架。
Yang designed a dashboard mount filled with steel ball bearings and lined with silicon.
用复阻抗法对硅衬底纳米钛酸钡湿敏元件的感湿机理进行了分析讨论。
Complex impendence techniques are used to analyze the humidity sensing mechanism of nanometer barium titanate humidity sensors on silicon substrate.
用磁控射频溅射方法在不加热的硅衬底上沉积生长锆钛酸铅镧（PLZT）薄膜。
Thin films of lead lanthanum zirconate titanate (PLZT) were deposited by rf magnetron sputtering from oxide targets onto unheated Si substrates.
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