硅衬底中还可以掺入适量碳、氮或氧等。
The silicon substrate also can be doped with proper carbon, nitrogen or oxygen, etc.
这些Q值受到导体电阻和硅衬底的涡流损耗的限制。
These Q values are limited by the conductor resistance and eddy current loss in the silicon substrate.
本文对这些氧化物薄膜硅衬底的相互作用也进行了讨论。
The interaction between oxide films and silicon substrates is discussed.
杨全国设计了一种以钢珠轴承填充并以硅衬底的仪表盘座架。
Yang designed a dashboard mount filled with steel ball bearings and lined with silicon.
在单晶硅衬底的一个侧面沉积有一层氧化铕红光发光薄膜。
A layer of europium oxide red light luminescent thin film is deposited on one side surface of a single crystal silicon substrate.
阐述了稀土金属硅化物的生长工艺和与硅衬底间势垒及界面特性。
The growth techniques, the barrier states and the interfaces for rare earth silicides were thoroughly described.
此外，缓冲层可以减少晶体管之间的设备和硅衬底平行的传导问题。
In addition, the buffer layer can mitigate parallel conduction issues between transistor devices and the silicon substrate.
用复阻抗法对硅衬底纳米钛酸钡湿敏元件的感湿机理进行了分析讨论。
Complex impendence techniques are used to analyze the humidity sensing mechanism of nanometer barium titanate humidity sensors on silicon substrate.
采用无电镀沉积技术在经过机械抛光的单晶硅衬底上沉积了铜纳米晶。
Copper nanocrystallites were deposited on mechanically polished single crystal silicon (sc-Si) wafers by electroless deposition method.
利用多孔硅形成的选择性，在指定的硅衬底区域制作多孔硅作牺牲层。
The porous silicon as a sacrificial layer could be fabricated in locally defined areas on the si substrate, using the selective formation of porous silicon.
例如，如图8a所示，氧化层810选择性地在硅衬底820上形成图案。
For example, as shown in FIG. 8a, an oxide layer 810 optionally is patterned on a silicon substrate 820.
研究了多孔硅衬底微波 CVD金刚石薄膜的制备工艺及其场电子发射特性 。
Preparation and field electron emission of diamond films grown on porous silicon substrates by MW-CVD are studied.
此外，缓冲层地址和缓解晶格薄膜之间的不匹配而相对形成晶体管和硅衬底上。
In addition, the buffer layer addresses and mitigates lattice mismatches between the film relative to which the transistor is formed and the silicon substrate.
用磁控射频溅射方法在不加热的硅衬底上沉积生长锆钛酸铅镧（PLZT）薄膜。
Thin films of lead lanthanum zirconate titanate (PLZT) were deposited by rf magnetron sputtering from oxide targets onto unheated Si substrates.
本发明公开了一种在硅衬底上生长氮化镓薄膜的方法，包括如下步骤：选择硅衬底；
The invention discloses a method for growing a gallium nitride membrane on a silicon substrate, which comprises the following steps: selecting the silicon substrate;
研究了硅衬底导电率变化对金属绝缘半导体传输线的分布电阻和分布电感参数的影响。
Examples are given to illustrate that the change of silicon substrate conductivity affects distributed parameters of MIS transmission line.
叙述了硅基传感器微机械加工的特点和要求，简要说明了硅衬底微细加工的常用方法。
The characteristics and requests of micromachining for silicon based sensors are introduced. The conventional methods of si substrate microfabrication are briefly described.
分别利用浸渍法和共沉淀法在硅衬底上制备高分散态和大部分结晶态的钼酸铋催化剂。
Silica-supported bismuth molybdate catalysts were prepared by impregnation in a highly dispersed state and by coprecipitation in a largely crystallized state.
岛面密度与膜厚的依赖关系表明，在临界厚度时硅衬底和玻璃衬底上的岛面密度均出现了极大值。
The film thickness dependence of island density shows that a maximum of island density appears at the critical film thickness for both substrates.
利用脉冲激光烧蚀技术在硅衬底上制备了类石墨薄膜，以该薄膜为阴极进行了场致电子发射实验。
The graphite-like film was prepared on silicon substrate by pulsed laser ablation, and the field electron emission from the film was measured.
氮化镓是增长了等离子体辅助(111)和分子束外延(001)硅衬底上氮化硅缓冲层使用铪。
Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers.
同时对多孔硅的整流特性、场发射性质以及多孔硅衬底对薄膜发光材料发光性能的影响进行了研究。
Rectification character, field emission character of porous silicon and effect of porous silicon on luminescence character of film luminescence material are studied, too.
在Protoflex原来的模型基础上，台阶已经做了修改，太阳能电池的测量是在硅衬底上进行。
Stages have been modified from Protoflex's original models to perform measurement on a Silicon based solar cells.
在3英寸镜面抛光的硅衬底上制备了平整的金刚石薄膜，生长的薄膜用SEM及喇曼光谱进行了测试。
A very uniform diamond film was grown on the mirror-polished 3 "Si wafer. The grown films were characterized by SEM and Raman spectroscopy."
采用国内研制的电子回旋共振化学气相沉积(ECRCVD)设备，在单晶硅衬底上沉积了金刚石薄膜。
Diamond thin films were successfully deposited on single - crystal si substrate at low pressure by a homemade equipment of electron cyclotron resonance chemical vapor deposition (ECRCVD).
本文研究了用热灯丝化学气相沉积方法在单晶硅衬底上制备金刚石薄膜时其成核密度与制备条件的关系。
In the present paper, the relation between diamond nucleation density and synthesis conditions is studied for the diamond thin film synthesized by hot filament chemical vapour deposition method.
本系统利用硅晶胞的动态移动描述整个硅衬底腐蚀模拟的全过程，需要的存储空间小，提高了模拟计算的速度。
Because of the combined of static and dynamic storage structure, the speed of the simulation is improved, so that the PC can carry out this etching simulation.
接着，硅晶片会被送入一个化学浴室，在暴露在外的硅衬底上蚀刻沟槽，同时光刻胶覆盖的区域不会受到任何影响。
Then the wafer is sent through a chemical bath that etches trenches into the exposed substrate, while leaving the areas covered by the photoresist untouched.
为了降低热导和热容，提高探测器的探测灵敏度，用KOH作化学腐蚀完全去除了线性阵列下方的硅衬底，形成悬空结构。
In order to reduce the thermal conductivity and heating capacity and increase the detectivity of array, the suspended structure was formed on silicon wafer by chemical etching of KOH.
本论文选用硅单晶太阳能电池器件，对辐照前后的电学参数和噪声参数进行测量，发现硅衬底材料的辐照损伤与电池的性能密切相关。
Through measuring and analyzing, it has been found that there is a strong correlation between the radiation damage of substrate material and the quality of the cells.
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