... silicon doping 硅掺杂 gold doping 掺金 gas doping technique 气体掺杂技术,气相掺...
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...962.DOC Key words: Si doping; hot filament chemical vapor deposition (HFCVD); diamond films [gap=26132]关键词：硅掺杂；热丝化学气相沉积法；金刚石薄膜 ...
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构成晶体管的硅常常要和其他原子掺杂以改变其导电性能。
The silicon of which transistors are made is frequently doped with other elements, to affect its electrical properties.
而最新的晶体管体积很小，掺杂沟道时只需在硅中置入少量掺杂原子。
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon.
因此，掺杂金属的种类决定金属掺杂硅团簇的增长模式。
Therefore, the growth pattern of metal doped silicon clusters depends on the kind of doped metal.
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