构成晶体管的硅常常要和其他原子掺杂以改变其导电性能。
The silicon of which transistors are made is frequently doped with other elements, to affect its electrical properties.
而最新的晶体管体积很小，掺杂沟道时只需在硅中置入少量掺杂原子。
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon.
本文提出的中子掺杂硅单晶旋转辐照模型，给出了热中子通量在硅断面上的分布．平均值和不均匀度。
The rotating irradiation model for ND silicon presented in this paper gives distribution, mean value and heterogeneity of the thermal flux on the cross section of silicon.
通过理论分析得出硅双结型色敏器件中掺杂浓度和两个结的结深是影响光谱响应范围的主要因素。
Theoretic analysis results show that the doping concentration and junction depth are main factors for the range of spectrum response of Si color sensor with double PN junction.
最新的晶体管尺寸非常小，在其通道中掺杂只要往硅中注入少量杂质原子，如果这个量掌握得不好，晶体管的正常运行就会受到影响。
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon. Get the number wrong, and things will not work properly.
掺杂是制备硅纳米线半导体器件的一个有效手段。
Doping of silicon nanowire is one of effective means to manufacture silicon nanowire semi -conductor devices.
本文对多晶硅膜离子注入掺杂和扩散掺杂制备浅发射结进行了实验研究。
An experimental study has been carried out on the doping of polysilicon by ion implantation and diffusion for the preparation of shallow junctions.
采用改进的掺杂多晶硅结构的SCB芯片，能满足低电压点火要求；
The improved SCB chip with doped silicon may satisfy the conditions of igniting by low voltage.
因此，掺杂金属的种类决定金属掺杂硅团簇的增长模式。
Therefore, the growth pattern of metal doped silicon clusters depends on the kind of doped metal.
铌掺杂硅化石墨是改善材料性能的有效方式。
Therefore, Nb doping silicified graphite is a practical way to improve material properties.
本论文主要研究声子频率和掺杂点缺陷浓度对同位素掺杂硅声子散射的影响。
This paper focuses on the phonon frequency effect and the isotope-doped concentrates effect on the phonon scattering in isotope-doped Si.
多晶硅用钡掺杂并且在含有低于约0.5%的不溶于硅的气体的二氧化硅坩埚中熔化。
Polysilicon is doped with barium and melted in a silica crucible containing less than about 0.5 % gasses insoluble in silicon.
该方法也包括执行第二注入工艺以便在硅层中注入附加的第二类型掺杂剂。
The method also includes performing a second implant process to implant additional dopant of the second type in the silicon layer.
公开了一种在单晶硅生长过程中使用的掺杂硅熔体的制备方法。
A process for preparing doped molten silicon for use in a single silicon crystal growing process is disclosed.
本发明涉及掺杂稀土的碱土硅氮化物无机发光材料的化学计量组合物的制造方法。
The invention relates to a method of manufacturing a rare-earth doped alkaline-earth silicon nitride phosphor of a stoichiometric composition.
本发明提供一种铋掺杂硅锌硼基光学玻璃及其制备方法。
The invention provides a bismuth doped silicate zinc boron based optical glass and a preparation method thereof.
利用离子注入技术，对稀土掺杂到半导体单晶硅中的光致发光行为进行了研究。
The photoluminescence properties of rare earth doped silicon were investigated with ion beam technique.
在硅铝共掺杂的薄膜中，当硅铝总含量为8%时杂化薄膜的击穿强度下降最少，薄膜的热分解温度达到最高值。
When the nano-particles' weight content was 8%, the drop of breakdown strength reach smallest value and the thermo-decomposed temperature reach the highest value.
提高体区掺杂浓度、增加硅膜和硅化物厚度能够减小增益。
The results show that the MOSFETs, with higher doping, thicker si film and silicide, have lower parasitic bipolar gain.
该方法包括用第一类型掺杂剂掺杂硅层并且执 行第一注入工艺以便在硅层中注入与第一类型相反的第二类型的掺 杂剂。
The method includes doping a silicon layer with a first type of dopant and performing a first implant process to implant dopant of a second type opposite the first type in the silicon layer.
钨丝网是由掺杂粉末，粉末中，少量的钾，硅和铝已经注册成立。
Tungsten Wire Mesh is made from doped powders, that is, powders in which small quantities of potassium, silicon and aluminum have been incorporated.
叙述了聚乙炔的合成和结构、聚乙炔掺杂以及近年来新开拓的导电聚合物-聚荼、硅-酞菁聚合物及聚噻吩薄膜；
It stated Polyacetylene synthesis and structure, mix of polyace-ty and recently developed new electric polymer: polynaphthal-ene, polysiliconphthalocyanine and polythiophene membrane.
多晶硅化金属层设置于杂质掺杂多晶硅层上，而多晶硅化金属层与多晶硅层可作为字线。
A polycide layer is defined over the impurity doped polysilicon layer. The polycide layer and the polysilicon layer function as a word line.
本文介绍用激光掺杂技术在高阻硅中掺入杂质来制造核辐射结型探测器的方法。
In this paper fabrication of nuclear radiation detectors by using laser-doping technique is reported.
杂质掺杂多晶硅层设置于两绝缘区与反熔丝上。
An impurity doped polysilicon layer is defined over the two insulator regions and the anti-fuse.
所注入的掺杂剂在硅层中具有第一掺杂剂分布。
The implanted dopant has a first dopant profile in the silicon layer.
NMOS晶体管(A)的门电极(16)在n -型掺杂的不含锗的多晶硅层(14)上形成。
The gate electrodes (16) of the NMOS transistors (a) are formed in a layer of n-type doped polycrystalline silicon (14) without germanium.
每个所述芯片具有覆盖在所述氮化硅层和所述栅极结构上的具有预定厚度的共形的掺杂硅玻璃层。
Each chip is provided with conformal doped silicon glass layers which are covered on the silicon nitride layer and are covered on the gate structure and which have predetermined thickness.
本发明公布了微波辐照制备钛硅化合物及其掺杂材料的方法。
The invention discloses a method for preparing Ti-Si compound under microwave irradiation and dopant material thereof.
本发明公布了微波辐照制备钛硅化合物及其掺杂材料的方法。
The invention discloses a method for preparing Ti-Si compound under microwave irradiation and dopant material thereof.
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