计算并讨论了所加电压与界面势垒对器件的复合电流及其复合效率的影响。

The influences of applied bias and interface barriers on carriers recombination and its efficiency are calculated and discussed.

youdao

应力试验后的样品，肖特基势垒接触界面模糊，有明显的互扩散和反应发生．。

The AES suggests that the interaction between gate metallization and GaAs active layer has taken place and the Schottky contact interface becomes ambiguous after stressing.

youdao

结果表明，纳米颗粒在界面处的吸附可减小核化的平衡胚泡半径，降低沸腾核化势垒，有利于核化的发生。

The results showed that nanoparticles accumulation at the vapor-liquid interface decreased embryo bubble radius and the potential barrier of nucleation, facilitating liquid nucleation.

youdao