计算并讨论了所加电压与界面势垒对器件的复合电流及其复合效率的影响。
The influences of applied bias and interface barriers on carriers recombination and its efficiency are calculated and discussed.
应力试验后的样品，肖特基势垒接触界面模糊，有明显的互扩散和反应发生．。
The AES suggests that the interaction between gate metallization and GaAs active layer has taken place and the Schottky contact interface becomes ambiguous after stressing.
结果表明，纳米颗粒在界面处的吸附可减小核化的平衡胚泡半径，降低沸腾核化势垒，有利于核化的发生。
The results showed that nanoparticles accumulation at the vapor-liquid interface decreased embryo bubble radius and the potential barrier of nucleation, facilitating liquid nucleation.
采用宏观连续介质模型研究了极性半导体双势垒结构中界面光学声子模。
The interface optical (IO) phonon modes in double barrier structures of polar semiconductor are studied with the macroscopic dielectric continuum model.
用单载流子器件模拟表明ITO经高频放电处理后降低了器件界面的空穴注入势垒。
Analogy of hole injection barrier indicates that the interface barrier of ITO is lowered after being treated with the high frequency discharge method using hole-only devices.
通过建立界面扰动模型，推导了三元固态置换反应系界面稳定性的化学势梯度判据。
A new interface-perturbation model of ternary system is suggested and the interface-stability criterion is derived in the form of chemical potential.
结果表明，与界面光滑的结比较，界面粗糙的结的有效势垒宽度较窄，有效势垒面积较小。
The results showed that the effective barrier width and area of the junction with the rough interfaces were smaller than those of the junction with the smooth interfaces.
建筑界面以现代、简洁为主调，强调动势，着力塑造清新、流畅的城市街景。
With modern and simplicity as main pattern, the architecture will be sculpted into fresh and flowing city street scenery.
阐述了稀土金属硅化物的生长工艺和与硅衬底间势垒及界面特性。
The growth techniques, the barrier states and the interfaces for rare earth silicides were thoroughly described.
阐述了稀土金属硅化物的生长工艺和与硅衬底间势垒及界面特性。
The growth techniques, the barrier states and the interfaces for rare earth silicides were thoroughly described.
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