... channel division: 信道划分 channel doping: 沟道掺杂 channel identifier: 信道标识符,信道识别符 ...
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To reduce the short-channel effects, the measures like increasing channel doping concentration and reducing gate-oxide thickness is proposed.
在小尺寸MOSFET中，为了减小短沟道效应，采取了增加沟道掺杂和减小栅氧化层厚度等措施。
参考来源 - 纳米MOSFET量子效应模型与寄生电阻分析·2,447,543篇论文数据，部分数据来源于NoteExpress
沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大。
The shift of drain current induced by same interface states density increases with the increase of channel do - ping density.
而最新的晶体管体积很小，掺杂沟道时只需在硅中置入少量掺杂原子。
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon.
该物理模型考虑了高压dmos器件的准饱和特性、沟道非均匀掺杂特性和温度效应。
The unique features of DMOS such as quasi-saturation, non-uniformly doped channel, and temperature dependencies are accurately modeled.
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