沟道掺杂浓度提高，同样的界面态密度造成的漏极特性漂移增大。
The shift of drain current induced by same interface states density increases with the increase of channel do - ping density.
而最新的晶体管体积很小，掺杂沟道时只需在硅中置入少量掺杂原子。
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon.
该物理模型考虑了高压dmos器件的准饱和特性、沟道非均匀掺杂特性和温度效应。
The unique features of DMOS such as quasi-saturation, non-uniformly doped channel, and temperature dependencies are accurately modeled.
本文提出一个非均匀掺杂、短沟道MOSFET阈电压的准二维解析模型。
A quasi-two dimentional analytical model of threshold voltage for non-uniform doped short channel MOSFET is presented in this paper.
本文提出一个非均匀掺杂、短沟道MOSFET阈电压的准二维解析模型。
A quasi-two dimentional analytical model of threshold voltage for non-uniform doped short channel MOSFET is presented in this paper.
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