... 氮化硅薄膜 silicon nitride film 氮化硅钝化 silicon nitride passivation 氮化硅工艺 silicon nitride process ...
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氮氧化硅薄膜 Si Ox Ny thin film
In silicon nitride film, the ratio of SiH_4 and NH_3 also affects the performance of film.
在氮化硅薄膜中硅烷与氨气的比值也会影响薄膜的性能。
参考来源 - 基于热光效应的可调FabryFourier Transform Infrared measurement is one of the most important methods to research the fabrication and configuration of silicon nitride thin film.
傅立叶变换红外光谱仪(FTIR)是研究氮化硅薄膜的组成和结构的重要方法之一。
参考来源 - a·2,447,543篇论文数据，部分数据来源于NoteExpress
先沉积氮化硅薄膜再氢等离子体处理能得到更好的钝化效果。
Depositing SiNx thin film followed by hydrogen plasma treatment will result in better passivation effect.
综述了钢铁表面形成氮化硅薄膜的基本过程，各种制备方法、特点及影响因素。
The principal mechanism of formation of silicon nitride layer on iron surface is described, and variety of production processes and influence factors are reviewed.
大量的实验研究表明，PECVD氮化硅薄膜的组成、结构及其性能与沉积参数密切相关。
Lots of experiments indicate that the form, structure and properties of silicon nitride thin film prepared by PECVD are related to deposition parameters.
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