先沉积氮化硅薄膜再氢等离子体处理能得到更好的钝化效果。
Depositing SiNx thin film followed by hydrogen plasma treatment will result in better passivation effect.
综述了钢铁表面形成氮化硅薄膜的基本过程，各种制备方法、特点及影响因素。
The principal mechanism of formation of silicon nitride layer on iron surface is described, and variety of production processes and influence factors are reviewed.
大量的实验研究表明，PECVD氮化硅薄膜的组成、结构及其性能与沉积参数密切相关。
Lots of experiments indicate that the form, structure and properties of silicon nitride thin film prepared by PECVD are related to deposition parameters.
本实验通过系统地改变沉积参数，在经过清洗好的单晶硅片上沉积了一系列的氮化硅薄膜。
In experiment, a series of silicon nitride thin films are prepared on cleaned silicon wafer by varying deposition parameters.
采用光化学气相淀积(光cvd)氮化硅薄膜进行器件的表面钝化，使整个器件提高了可靠性。
The devices were passivated by the thin film of Photo-CVD silicon nitride, we found that the reliability of the devices was to be raised.
采用射频等离子体增强化学气相沉积法(RF - PECVD)在钢衬底上沉积氮化硅薄膜。
Silicon nitride thin films were prepared onto steel substrates by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique.
利用椭圆偏振光谱、反射谱、红外吸收谱和准稳态光电导（QSSPC）分析了氮化硅薄膜的特性。
The characterization of SiN thin films was studied by spectral ellipsometry, reflection spectra, infrared absorption spectroscopy (IR) and quasi-steady state photoconductance (QSSPC) measurements.
利用等离子体增强化学气相沉积（PECVD）工艺，在不同射频功率，不同反应气压条件下制备了氮化硅薄膜。
SiN thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) under various power and pressure conditions.
通过将石墨烯薄片放置在一个氮化硅薄膜上，并用电子束在石墨烯上打出纳米尺度的孔，他们制作出了一系列从5到25nm直径的孔。
They create a series of pores ranging from 5 to 25 nm in diameter by placing flakes of graphene over a silicon nitride membrane and drilling nanosized holes in the graphene using an electron beam.
该薄膜大致上可为氮化硅。
该薄膜大致上可为氮化硅。
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