... 氢钝化 [gap=1265]Key word: Silicon nitride , PECVD, anneal, solar cells, ARC, hydrogen diffusion, hydrogen passivation, ...
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However, because there are polar bonding on SiC surface, Tradditional wet hydrogen passivation technology is not fit for SiC.
由于SiC表面存在极性键，传统的湿法氢钝化技术并不适合SiC。
参考来源 - SiC半导体表面处理技术研究·2,447,543篇论文数据，部分数据来源于NoteExpress
本文介绍了在AFM针尖与氢钝化硅表面之间施加电场作用对硅表面进行修饰的纳米加工方法，重点讨论了加工机理。
In the paper a kind of patterning method was studied with voltage applied between the AFM tip and sample with emphasis on its mechanism.
先沉积氮化硅薄膜再氢等离子体处理能得到更好的钝化效果。
Depositing SiNx thin film followed by hydrogen plasma treatment will result in better passivation effect.
氢等离子体退火对电活性的位错态有显著的钝化作用。
They can be passivated with hydrogen plasma annealing and reactivated by subsequent thermal annealing in vacuum.
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