The groove-gate device can improve the reliability, especially restrain the drain induced barrier lowing (DIBL).
槽栅器件能够从结构上提高器件的可靠性,对DIBL效应的抑制尤其明显。
参考来源 - 90nm CMOS器件强场可靠性研究·2,447,543篇论文数据，部分数据来源于NoteExpress
报道了一种新结构的功率栅控晶闸管，称其为槽栅MOS控制的晶闸管(TMCT)。
A new structure of power MOS-gated thyristor named Trench MOS Controlled thyristor (TMCT) is presented.
作者经过计算和分析，说明压气机叶栅流中主要的相互作用形式是叶栅槽道中激波和湍流附面层的相互作用。
It is shown by calculation and analysis that the main form of the interaction in compressor cascades is the interaction between shock wave and turbulent boundary layer in channels.
实验证明，采用一步扩散法制备的氧化层的厚度和质量都很好的满足了机械刻槽埋栅电池的工艺要求；
The experiment proves the requirement of the device and the process in the quality and thickness of the silicon oxidation layer is well met.
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