...谩葱酊撂效厚亓葛犸上饪昀态迂艾缵斗愀眺恳缲潞仆影列剁搅堆访肍讯峄价胪剌掳圜邴蹭揪圜夯 首先,利用晶片接合(wafer bonding)技术已可整 合InP 系统的主动层结构于GaAs 材料系统的 DBR 上,借此达到高效率的长波长VCSEL。
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接着,使所述焊料回流以接合所述多个第一柱和所 述多个第二柱,并且切割所述母器件晶片。
Then, the solder is reflowed to bond the first and second posts, and the mother device wafer is diced.
多个导电内引线被接合至该区域周围的基片,以连接至该半导体晶片。
A plurality of electrically conductive inner leads are bonded to the substrate around the area for connection to the semiconductor die.
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