磊晶：关键与限制-晶格匹配之材料系统；应变层（晶）-厚度上限；应力对能带的影响，特性。
Epitaxy: Concerns/ constraints- lattice-matched systems; strained layers( pseudomorphic)- limits of thickness; impact of strain on bands, properties.
同时发现衬底晶格是否匹配与C_（60）取向膜的生长关系不大，而具有弱表面键的衬底有利于C_（60）膜的取向生长。
Moreover, the substrate with weak surface dangling bands was found to be necessary for the oriented growth of C60 films.
此外，缓冲层地址和缓解晶格薄膜之间的不匹配而相对形成晶体管和硅衬底上。
In addition, the buffer layer addresses and mitigates lattice mismatches between the film relative to which the transistor is formed and the silicon substrate.
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