• 磊晶:关键与限制-晶格匹配之材料系统应变)-厚度上限应力能带影响特性

    Epitaxy: Concerns/ constraints- lattice-matched systems; strained layers( pseudomorphic)- limits of thickness; impact of strain on bands, properties.

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  • 同时发现衬底晶格是否匹配与C_(60)取向生长关系不大,而具有表面键的衬底有利于C_(60)膜的取向生长。

    Moreover, the substrate with weak surface dangling bands was found to be necessary for the oriented growth of C60 films.

    youdao

  • 此外缓冲地址缓解晶格薄膜之间匹配相对形成晶体管衬底上

    In addition, the buffer layer addresses and mitigates lattice mismatches between the film relative to which the transistor is formed and the silicon substrate.

    youdao

  • 此外缓冲地址缓解晶格薄膜之间匹配相对形成晶体管衬底上

    In addition, the buffer layer addresses and mitigates lattice mismatches between the film relative to which the transistor is formed and the silicon substrate.

    youdao

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