The method to increase the doping content by using multilayer impurity film was pointed out by analyzing the effect of monolayer impurity film to the doping content.
通过分析单层杂质膜对掺杂量的局限性,提出了利用多层杂质膜的手段来提高掺杂量。
参考来源 - 空气氧化法制备VO·2,447,543篇论文数据，部分数据来源于NoteExpress
并分别考察了掺杂量、加热时间和功率对合成产品晶型的影响。
The effects of the doping amount, the microwave heating time and power on the products were also investigated.
采用固相烧结法合成了不同镧掺杂量的PZN - PZ t压电陶瓷和粉体。
The La-doped PZN-PZT ceramics and their powders were fabricated using solid state sintered technology.
同一掺杂量的铌酸锂晶体，与生长态的相比，晶体缺陷氧化态的增加，还原态的减少。
The crystal with the same Mn doping amount, compared with the growth state, the defect increased at the oxidation state and decreased at the reduction state.
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