而矫顽力则随掺杂量的增多持续下降。
The coercive force gradually decreased with the MnO2 content increase.
并分别考察了掺杂量、加热时间和功率对合成产品晶型的影响。
The effects of the doping amount, the microwave heating time and power on the products were also investigated.
采用固相烧结法合成了不同镧掺杂量的PZN - PZ t压电陶瓷和粉体。
The La-doped PZN-PZT ceramics and their powders were fabricated using solid state sintered technology.
在掺杂过程中样品有时表现为金属性，有时表现为半导体性质，跟掺杂量有关。
The samples can be either metallic or semiconducting, depending on the amount of intercalted Eu atoms.
同一掺杂量的铌酸锂晶体，与生长态的相比，晶体缺陷氧化态的增加，还原态的减少。
The crystal with the same Mn doping amount, compared with the growth state, the defect increased at the oxidation state and decreased at the reduction state.
然而相对高浓度的掺杂量则会降低膜层的稳定性，破坏溶胶凝胶膜层的腐蚀防护性能。
However, cobaltous acetate of relatively high concentration in sol-gel coatings might undermine both the stability and the corrosion resistance performance of the coatings after immersion.
分析讨论了晶体结构，电子能带，态密度和光学性质与掺杂元素种类和掺杂量之间的关系。
The electronic bands, density of states and optical properties are obtained accordingly, and the doping-effects on the electrical and optical properties also are analysed.
复合薄膜具有欧姆特性，其电阻值随纳米银掺杂量的增加而增加，符合麦克斯韦的有效介质模型。
The films have Ohmic contact property, whose resistance is increasing with the increase of Ag doping concentration, which matches the model of Maxwell's theory of effective media.
纳米银的掺杂量越大，在相同时间内释放出来的纳米银越多，其中部分银是包含在海藻酸钠碎屑中的。
The released nano-Ag partly exists in the chips peeled from film, and its total amount is increasing with its doping concentration.
实验结果表明：硫化物的不同掺杂量对产物结构的影响不大，这使得平行样的光催化活性无明显变化；
It was found that the different content of sulfide had no obvious effect on the structure of nanocomposite so that the.
的超导电性能进行了系统测量，发现随着镁和锶掺杂量的增加，样品的超导转变温度总体呈明显降低趋势。
The result indicates that superconductivity transition temperature has a tendency of obvious dropping with the increase of Mg and Sr substituting quantity.
实验证明，建立一个稳定合适的热场、保持b_2o_3的透明度、控制好掺杂量等是减少孪晶的必要条件。
The results indicate that a stable and suitable thermal field, the transparence of B_2O_3, doping quantity are important conditions for growth of twin-free InP crystal.
利用介电损耗峰随掺杂量的变化，研究了缺陷浓度在掺杂材料中的变化，以此来研究掺杂对铁电性能的影响机制。
The dielectric loss is measured to study the variation of defect concentration in doped ceramics. And the mechanism of doping is analyzed.
对于所研究的注量范围，所观察的效应是由于IGBT少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。
For the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density.
最新的晶体管尺寸非常小，在其通道中掺杂只要往硅中注入少量杂质原子，如果这个量掌握得不好，晶体管的正常运行就会受到影响。
The latest devices, though, are so small that doping their channels involves placing just a handful of dopant atoms among the silicon. Get the number wrong, and things will not work properly.
掺杂邻菲咯啉的混合l B膜荧光强度比纯膜强，但不是邻菲咯啉加入的量越多发光性越强。
The films doping o-phenanthroline (abbreviated as phen) made increasing in the relative intensity of fluorescent emission behavior that of pure LB films, but the large amount of phen was not better.
首先，揭示了研究碳纳米管储氢的意义，指出通过对碳纳米管进行过渡金属掺杂能够有效地提高其储氢量。
Firstly, the significance of investigation on hydrogen storage in carbon nanotubes (CNTs) is indicated, and the hydrogen storage capacity of CNTs can be enhanced obviously by transition metal-doping.
在光折变过程中，光波对掺杂中心的激发系数S是一个重要的物理量。
The photon-excitation coefficient S is important in the process of photorefraction.
掺杂聚乙炔的电导率随掺杂剂与聚乙炔链之间电荷转移量的增大而增大。
The conductivity of doped PA increases as the increase of the amount of charge transfer between the dopant and the PA chain.
分析计算了埋沟结深、衬底掺杂等对CCD最佳工作点及最大电荷处理量的影响。
The effect factors such as the buried channel junction depth and substrate doping concentration on the CCD's optimum operating point and maximum charge capacity are analysed.
分析计算了埋沟结深、衬底掺杂等对CCD最佳工作点及最大电荷处理量的影响。
The effect factors such as the buried channel junction depth and substrate doping concentration on the CCD's optimum operating point and maximum charge capacity are analysed.
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