该放大器采用有源电感负载技术和放大器直接耦合技术以提高增益，拓展带宽，降低功耗并保持了良好的噪声性能。
Active inductor loads and direct-coupled technology are employed to increase the gain, broaden the bandwidth, reduce the power dissipation, and keep a tolerable noise performance.
基于LDMOS FET的高增益、高输出功率、低功耗和良好的散热特性，分别设计了S波段45w和180w固态功率放大器。
Considering LDMOS FETs high gain, high output power, low power loss and efficient heat dissipation, a S-band, 45w and 180w solid state power amplifier is designed.
因增益与带漏电流和功耗成比例，一个最小漏电流会在MOS场效应管振荡放大器元件能够提供适当的增益用于振荡的时候出现。
Thus, since gain scales with drain current and power dissipation, a minimum drain current exists at which a MOSFET oscillator amplifier element supplies adequate gain for oscillation.
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