该放大器采用有源电感负载技术和放大器直接耦合技术以提高增益，拓展带宽，降低功耗并保持了良好的噪声性能。
Active inductor loads and direct-coupled technology are employed to increase the gain, broaden the bandwidth, reduce the power dissipation, and keep a tolerable noise performance.
基于LDMOSFET的高增益、高输出功率、低功耗和良好的散热特性，分别设计了S波段45w和180w固态功率放大器。
Considering LDMOS FETs high gain, high output power, low power loss and efficient heat dissipation, a S-band, 45w and 180w solid state power amplifier is designed.
因增益与带漏电流和功耗成比例，一个最小漏电流会在MOS场效应管振荡放大器元件能够提供适当的增益用于振荡的时候出现。
Thus, since gain scales with drain current and power dissipation, a minimum drain current exists at which a MOSFET oscillator amplifier element supplies adequate gain for oscillation.
与采用传统的电压放大器相比，实现了恒定的增益带宽、高线性度、高精度和较低的功耗。
Compared to conventional voltage amplifier, the constant bandwidth, high linearity and precision, and low power are achieved.
与采用传统的电压放大器相比，实现了恒定的增益带宽、高线性度、高精度和较低的功耗。
Compared to conventional voltage amplifier, the constant bandwidth, high linearity and precision, and low power are achieved.
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