反应溅射是指在存在反应气体的情况下,溅射靶材时,靶材会与反应气体反应形成化合物(如氮化物或氧化物),在惰性气体溅射化合物靶材时由于化学不稳定性往往导致薄膜较靶材少一个或更多组分,此时如果加上反应气体可以补偿所缺少的组分,这种溅射也可以视为反应溅射。
【正文快照】: 一一口1 弓 反应溅射(reactive sputtering)是制备化合物薄膜,如氧化物、氮化物和碳化物薄膜的有效方法.
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反应溅射法 reactive sputtering
反应溅射源 Reactive sputtering source
反应溅射刻蚀 [电子] reactive sputter etching
射频磁控反应溅射 radio frequency magnetron reactive sputtering
直流磁控反应溅射 DC magnetron reactive sputtering
反应溅射设备 reactive sputtering equipment
反应溅射沉积 reactive sputter deposition
离子束反应溅射 Ion beam reactive sputtering
Reactive sputter deposition and anneal are the main processes of the fabrication. The main process parameters are enumerated, and the effect of process parameters on VO2 quality is also discussed.
本文主要研究了反应溅射制备二氧化钒薄膜的工艺方法,分析了各个控制参数对薄膜质量的影响,并给出了工艺参数。
参考来源 - VONiOx thin films were prepared using dc magnetron reactive sputtering in the various pressures of oxygen.
运用直流磁控反应溅射技术,在不同的氧气压强下,沉积NiOx薄膜。
参考来源 - NiO·2,447,543篇论文数据,部分数据来源于NoteExpress
用磁控反应溅射法在不同氧分压下制备了氮氧化铪薄膜。
HfOxNy thin films were deposited by radio frequency reactive magnetron sputtering onto multi-spectral ZnS substrates at different oxygen partial pressure.
三极反应溅射具有设备简单,工艺简便,镀层致密等特点。
Three pole reaction sputtering has the properties of simple equipment, easy process and fined film.
采用直流磁控反应溅射法,在玻璃和石英基体上制备了TiO2薄膜。
TiO2 thin films were deposited on glass and quartz substrates, respectively, using the direct current reactive magnetron sputtering method.
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