关键词 : AlN 薄膜 ; 直流磁控反应溅射 ; 择优取向 ; 半高宽 [gap=7499]Key words : AlN thin film ; DC magnetron reactive sputtering ; preferential orientation ; FWHM
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采用直流磁控反应溅射法，在玻璃和石英基体上制备了TiO2薄膜。
TiO2 thin films were deposited on glass and quartz substrates, respectively, using the direct current reactive magnetron sputtering method.
论述了高温直流磁控反应溅射法制备ito透明导电薄膜时氧分压、溅射气压和溅射电流等参数对其光电特性的影响。
The effect on the electrical and optical properties is studied as ITO transparent conductive thin films prepared by DC magnetron reactive sputtering technique with different deposition parameters.
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