半导体中电子或空穴在电场中的运动。
The motion of electrons or holes in semiconductor in electric field.
而霍耳系数取决于半导体材料中电子浓度和空穴浓度的相对大小及其迁移率之比。
Hall coefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor.
在皮秒脉冲激光辐照时,半导体材料表面的能量转换过程中,重点讨论能量从电子-空穴等离子体到晶格的转换过程。
The processes of energy transfer of semiconductor surface irradiated by picosecond laser pulses are studied. Discussion is focussed on energy transfer from the electron-hole plasma to the lattice.
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