半导体中电子或空穴在电场中的运动。
The motion of electrons or holes in semiconductor in electric field.
而霍耳系数取决于半导体材料中电子浓度和空穴浓度的相对大小及其迁移率之比。
Hall coefficient depends on electronic concentration and the relative values of empty hole concentrations and their migration rate in the semiconductor.
在皮秒脉冲激光辐照时，半导体材料表面的能量转换过程中，重点讨论能量从电子-空穴等离子体到晶格的转换过程。
The processes of energy transfer of semiconductor surface irradiated by picosecond laser pulses are studied. Discussion is focussed on energy transfer from the electron-hole plasma to the lattice.
多数载流子-一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
The smallest unit that supports electron flow in a semiconductor material ; a hole in P-type silicon or a free electron in N-type silicon.
空穴和电子结合而形成光子，从而使得电致发光半导体层发出可见光。
The holes and electrons, combine to form photons, thereby causing the electroluminescent semiconductor layer to emit visible light.
考虑到电子空穴间的相互作用，我们讨论了光波与半导体的相互作用，得到了描述光激发电子空穴极化波的方程。
After considering the interaction between electrons, the problem of a semiconductor interacting with light is discussed and the equation of exciton polarization wave excited by light wave is obtained.
本发明涉及掺氮空穴型氧化锌薄膜材料的喷雾热解制备方法，属于半导体材料领域。
The present invention is spraying pyrolysis process of preparing nitrogen doped hole type zinc oxide film material, and belongs to the field of semiconductor material.
本发明提供一种能够充分抑制空穴的移动的半导体装置。
The present invention provides a semiconductor capable of sufficiently inhibiting the movement of the holes.
本发明提供一种能够充分抑制空穴的移动的半导体装置。
The present invention provides a semiconductor capable of sufficiently inhibiting the movement of the holes.
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