非对称双量子阱中载流子动力学过程的温度依赖性研究，对于实现室温下高效的量子阱光电器件有着非常重要的意义。
The understanding of the temperature dependence of carrier dynamics in an asymmetric double-quantum-well is essentially important for the realization of room temperature efficient photonic devices.
对微波光电导法测量半导体少数载流子寿命的测试系统进行灵敏度分析。
The sensitivity for the semiconductor minority carrier lifetime measurement system was determined using microwave photoconductance decay.
而这种计算机模拟方法不仅可以得到自由光电子的衰减曲线，还可同时获得各种俘获中心中载流子的行为曲线。
However, through computer simulation, it can obtain not only the decay curve of free photoelectrons, but also the behavior curve of carriers in all kinds of trapping centers.
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