非对称双量子阱中载流子动力学过程的温度依赖性研究，对于实现室温下高效的量子阱光电器件有着非常重要的意义。
The understanding of the temperature dependence of carrier dynamics in an asymmetric double-quantum-well is essentially important for the realization of room temperature efficient photonic devices.
对微波光电导法测量半导体少数载流子寿命的测试系统进行灵敏度分析。
The sensitivity for the semiconductor minority carrier lifetime measurement system was determined using microwave photoconductance decay.
而这种计算机模拟方法不仅可以得到自由光电子的衰减曲线，还可同时获得各种俘获中心中载流子的行为曲线。
However, through computer simulation, it can obtain not only the decay curve of free photoelectrons, but also the behavior curve of carriers in all kinds of trapping centers.
利用少数载流子的稳态连续性方程和半导体材料对光的吸收，求出光电流的表达式。
We utilize the minority carrier equilibrium continuity equations and semiconductor material absorption of photo to get the expression of current induced by photo.
从聚合物光电池中光电流和暗电流的产生机制出发，对该现象进行了解释，认为外加磁场可以有效改变单重态极化子对和三重态极化子对之间的相对比例，进而使自由载流子浓度增加。
The results show that the magnetic field can effectively change the relative ratio between the singlet and the triplet polaron pairs, resulting in an increase in the density of the free carriers.
光电导开关的超快特性主要由触发光脉冲脉宽和开关芯片材料载流子复合寿命决定。
The main results obtained are as follows:1. The ultra-fast characteristics of photoconductive switches were mainly determined by the optical pulse width and the carrier lifetime of the chip material.
光电导开关的超快特性主要由触发光脉冲脉宽和开关芯片材料载流子复合寿命决定。
The main results obtained are as follows:1. The ultra-fast characteristics of photoconductive switches were mainly determined by the optical pulse width and the carrier lifetime of the chip material.
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