在微波等离子体化学气相沉积装置中，研究了负偏压形核对金刚石薄膜与WC 6 %硬质合金刀具附着力的影响。
The influence of bias enhanced nucleation(BEN) to the adhesion between diamond coating and WC-6%Co carbide cutting tool is researched with the microwave plasma (CVD) instrument.
直接施加于试样的脉冲负偏压对等离子体特性没有明显影响，但存在着一定的溅射作用。
The influence of negative pulse voltage applied directly to stainless steel samples on plasma characteristics has been found to be negligible, except sample sputtering.
采用过滤阴极真空电弧技术并施加一定的衬底负偏压，在P（100）单晶硅片上制备出四面体非晶碳薄膜。
Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.
应用推荐