在微波等离子体化学气相沉积装置中，研究了负偏压形核对金刚石薄膜与WC 6 %硬质合金刀具附着力的影响。
The influence of bias enhanced nucleation(BEN) to the adhesion between diamond coating and WC-6%Co carbide cutting tool is researched with the microwave plasma (CVD) instrument.
直接施加于试样的脉冲负偏压对等离子体特性没有明显影响，但存在着一定的溅射作用。
The influence of negative pulse voltage applied directly to stainless steel samples on plasma characteristics has been found to be negligible, except sample sputtering.
采用过滤阴极真空电弧技术并施加一定的衬底负偏压，在P（100）单晶硅片上制备出四面体非晶碳薄膜。
Tetrahedral amorphous carbon (ta-C) films have been deposited on P-type (100) polished c-silicon wafer with different substrate negative bias by filtered cathodic vacuum arc technology.
为进一步提高沉积速度，对灯丝组施加相对于基底夹持器的负偏压，使得在基底和灯丝组之间的DC等离子体也得以保持。
To further increase deposition rates, the filament array is biased negatively with respect to the substrate holder so that a DC plasma is also maintained between the substrate and filament array.
在微波等离子体化学气相沉积金刚石膜时，采用负偏压使氢和硼离子轰击金刚石膜表面。
The hydrogen and boron ion bombardments were performed by applying a negative bias voltage to the substrate during microwave plasma chemical vapor deposition process.
采用调节射频电感性耦合等离子体中基片电极与地之间的外部电路阻抗的方法，控制基片电极的射频自偏压。
The RF self-bias of the substrate in an RF inductively coupled plasma is controlled by changing the impedance of an external circuit inserted between the substrate and the ground.
采用调节射频电感性耦合等离子体中基片电极与地之间的外部电路阻抗的方法，控制基片电极的射频自偏压。
The RF self-bias of the substrate in an RF inductively coupled plasma is controlled by changing the impedance of an external circuit inserted between the substrate and the ground.
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